transistor (npn) features z low v ce(sat) .v ce(sat) = 0.2v (typ.)(i c / i b = 2a / 0.1a) z excellent current gain characteristics. z complements to 2sa1585 maximum ratings (t a =25 unless otherwise noted) symbol parameter value units v cbo collector-base voltage 40 v v ceo collector-emitter voltage 20 v v ebo emitter-base voltage 6 v i c collector current -continuous 3 a p c collector power dissipation 500 mw t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c = 50 a, i e =0 40 v collector-emitter breakdown voltage v (br)ceo i c =1ma , i b =0 20 v emitter-base breakdown voltage v (br)ebo i e =50 a, i c =0 6 v collector cut-off current i cbo v cb =30v, i e =0 0.1 a emitter cut-off current i ebo v eb = 5v, i c =0 0.1 a dc current gain h fe v ce =2v, i c = 0.1a 120 560 collector-emitter saturation voltage* v cesat i c = 2a, i b =0.1a 0.5 v transition frequency f t v ce =2v, i c =0.5 a f=100mhz 200 290 mhz *pulse test classification of h fe rank q r s range 120-270 180-390 270-560 marking 4115q 4115r 4115s sot-89 1. base 2. collector 3. emitter 1 2 3 1 www.htsemi.com semiconductor jinyu 2SC4115
2 www.htsemi.com semiconductor jinyu 2SC4115
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